Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220 IPP80N06S209AKSA2
- RS Stock No.:
- 218-3071
- Mfr. Part No.:
- IPP80N06S209AKSA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD769.00
(exc. GST)
TWD807.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 03, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD76.90 | TWD769.00 |
| 20 - 20 | TWD75.00 | TWD750.00 |
| 30 + | TWD73.80 | TWD738.00 |
*price indicative
- RS Stock No.:
- 218-3071
- Mfr. Part No.:
- IPP80N06S209AKSA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 175°C | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 55 V N-Channel automotive MOSFET. This MOSFET is used in valves control, solenoids control, lighting, single-ended motors etc.
N-channel - Enhancement mode
175°C operating temperature
100% Avalanche tested
Related links
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- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263