Infineon 500V CoolMOS CE Type N-Channel MOSFET, 7.6 A, 500 V N, 3-Pin TO-252 IPD50R500CEAUMA1
- RS Stock No.:
- 218-3049
- Mfr. Part No.:
- IPD50R500CEAUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
TWD302.00
(exc. GST)
TWD317.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 620 | TWD15.10 | TWD302.00 |
| 640 - 1240 | TWD14.70 | TWD294.00 |
| 1260 + | TWD14.50 | TWD290.00 |
*price indicative
- RS Stock No.:
- 218-3049
- Mfr. Part No.:
- IPD50R500CEAUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 | |
| Series | 500V CoolMOS CE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 | ||
Series 500V CoolMOS CE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Related links
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-252
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 550 V N, 3-Pin TO-220
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 550 V N, 3-Pin TO-220 IPA50R800CEXKSA2
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-252
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-220
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-220 IPA50R950CEXKSA2
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252