Infineon OptiMOS 3 Type N-Channel MOSFET, 35 A, 200 V N, 8-Pin TDSON BSC350N20NSFDATMA1
- RS Stock No.:
- 218-2979
- Mfr. Part No.:
- BSC350N20NSFDATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD266.00
(exc. GST)
TWD279.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 720 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 1245 | TWD53.20 | TWD266.00 |
| 1250 - 2495 | TWD51.80 | TWD259.00 |
| 2500 + | TWD50.20 | TWD251.00 |
*price indicative
- RS Stock No.:
- 218-2979
- Mfr. Part No.:
- BSC350N20NSFDATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS 3 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS 3 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ series N-channel power MOSFET. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. It is ideal for high-frequency switching and synchronous rectification.
N-channel, normal level
Very low on-resistance RDS(on)
Pb-free lead plating
Related links
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