Infineon Dual HEXFET 1 N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8 IRF8910TRPBF

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Subtotal (1 pack of 25 units)*

TWD502.50

(exc. GST)

TWD527.50

(inc. GST)

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Units
Per unit
Per Pack*
25 - 975TWD20.10TWD502.50
1000 - 1975TWD19.60TWD490.00
2000 +TWD18.30TWD457.50

*price indicative

Packaging Options:
RS Stock No.:
215-2590
Mfr. Part No.:
IRF8910TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

20V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.4nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

2W

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Height

1.5mm

Width

4mm

Standards/Approvals

No

Length

5mm

Number of Elements per Chip

1

Automotive Standard

No

The Infineon HEXFET Power MOSFET has 20V maximum drain source voltage in a SO-8 package. It has application as dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box.

Lead-Free

Low RDS(on)

Ultra-Low Gate Impedance

Dual N-Channel MOSFET

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