Infineon 800V CoolMOS P7 N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1

RS Stock No.:: 215-2518
Mfr. Part No.:: IPD80R900P7ATMA1
Manufacturer:: Infineon

Infineon 800V CoolMOS P7 N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1

The image is for reference only, please refer to product details and specifications

Bulk discount available

View bulk pricing options

Subtotal (1 pack of 20 units)*

TWD880.00

(exc. GST)

TWD924.00

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Pack*
20 - 620	TWD44.00	TWD880.00
640 - 1240	TWD42.90	TWD858.00
1260 +	TWD40.10	TWD802.00

*price indicative

RS Stock No.:: 215-2518
Mfr. Part No.:: IPD80R900P7ATMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	800V
	Series	800V CoolMOS P7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	45W
	Typical Gate Charge Qg @ Vgs	15nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 800V
	Series 800V CoolMOS P7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 45W
	Typical Gate Charge Qg @ Vgs 15nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 900mV
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD80R900P7ATMA1

Infineon 800V CoolMOS P7 Series MOSFET, 800V Drain Source Voltage, 6A Continuous Drain Current - IPD80R900P7ATMA1

This MOSFET is a high-voltage switching transistor designed for power conversion and energy-efficient switching in demanding environments. It operates across a wide temperature range and is supplied in a surface-mount package suited to compact board layouts, making it appropriate for industrial and power-electronics applications where robust voltage handling is required.

Features and Benefits:

• 800V drain rating enables high-voltage system switching
• 6A continuous drain current supports moderate load currents
• 900mΩ low on-resistance reduces conduction losses
• 15nC typical gate charge allows faster gate-drive response
• 45W maximum power dissipation handles substantial thermal stress
• Gate-source tolerance up to 20V accommodates common gate-drive voltages

Applications

• Ideal for power supplies in high-voltage converters
• Used for switch-mode power-supply stage switching
• Suitable for industrial inverter front-ends
• Can be used for high-voltage motor-drive circuits
• Used with compact surface-mount assemblies on PCBs

What temperature extremes can it withstand in operation?

It is specified to function between -55°C and 150°C, covering low-temperature and elevated-junction applications.

How is it mounted to a PCB and what package does it use?

It is supplied in a TO-252 package intended for surface-mount assembly to save board area.

What conduction behaviour should I expect under load?

The device exhibits an on-resistance up to 900mΩ, influencing conduction losses and thermal design for continuous currents up to 6A.

What gate-drive requirements are necessary for safe operation?

The gate-source voltage rating is ±20V, and typical total gate charge is 15nC, informing your driver capability and switching energy budget.