Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-252 IPD70R600P7SAUMA1
- RS Stock No.:
- 215-2509
- Mfr. Part No.:
- IPD70R600P7SAUMA1
- Manufacturer:
- Infineon
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TWD667.50
(exc. GST)
TWD701.00
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 600 | TWD26.70 | TWD667.50 |
| 625 - 1225 | TWD26.00 | TWD650.00 |
| 1250 + | TWD24.40 | TWD610.00 |
*price indicative
- RS Stock No.:
- 215-2509
- Mfr. Part No.:
- IPD70R600P7SAUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | 700V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 10.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series 700V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 10.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 8.5A Continuous Drain Current - IPD70R600P7SAUMA1
This MOSFET is a high-voltage, N‑channel switching transistor designed for surface‑mount power applications. It operates in enhancement mode and is intended for circuits requiring elevated drain-source voltage capability while providing moderate conduction performance and thermal handling for compact SMD layouts.
Features and Benefits:
• 700V drain-source rating enables high‑voltage switching duties
• 8.5A continuous drain current supports sustained load conduction
• 600mΩ Rds(on) limits conduction losses in medium‑power designs
• 10.5W maximum power dissipation permits reliable thermal margin
• 10.5nC typical gate charge gives faster gate transitions
• ±20V gate tolerance allows standard gate‑drive voltages
• 8.5A continuous drain current supports sustained load conduction
• 600mΩ Rds(on) limits conduction losses in medium‑power designs
• 10.5W maximum power dissipation permits reliable thermal margin
• 10.5nC typical gate charge gives faster gate transitions
• ±20V gate tolerance allows standard gate‑drive voltages
Applications
• Suitable for high‑voltage switch‑mode power supplies
• Ideal for primary‑side power conversion stages
• Used with resonant and hard‑switched topologies
• Can be used for industrial lighting ballasts
• Employed in compact SMD power modules
• Ideal for primary‑side power conversion stages
• Used with resonant and hard‑switched topologies
• Can be used for industrial lighting ballasts
• Employed in compact SMD power modules
What temperature range can it withstand in operation?
It is specified to operate from -55°C up to 150°C, covering wide thermal environments.
How many electrical connections does it present for PCB layout?
The device has three pins in a TO‑252 surface‑mount package requiring conventional SMD footprint design.
What conduction characteristic determines voltage drop during on‑state?
The on‑state resistance of 600mΩ defines the voltage drop at a given drain current and affects conduction losses.
How does gate drive affect switching performance?
The typical gate charge of 10.5nC at Vgs conditions influences required drive current and switching speed for a given gate‑driver capability.
Related links
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220 IPA70R600P7SXKSA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
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