Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1
- RS Stock No.:
- 215-2469
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 50 units)*
TWD1,050.00
(exc. GST)
TWD1,102.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 1,900 unit(s) shipping from August 10, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | TWD21.00 | TWD1,050.00 |
| 750 - 1450 | TWD20.50 | TWD1,025.00 |
| 1500 + | TWD19.10 | TWD955.00 |
*price indicative
- RS Stock No.:
- 215-2469
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 620mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 620mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 620mA Maximum Continuous Drain Current - BSR315PH6327XTSA1
Features and Benefits:
• 800mΩ Rds(on) reduces conduction losses at low currents
• 0.62A continuous drain current supports small‑signal loads
• 6nC typical gate charge enables faster switching transitions
• 0.5W power dissipation suits low‑power surface‑mount designs
• -55°C to 150°C rating for extended temperature environments
Applications
• Suitable for portable device power‑path switching
• Ideal for signal‑level polarity control in modules
• Can be used for small motor‑drive gate stages
• Used with thermal‑management‑limited SMD assemblies
What gate‑drive limitations should I consider?
How does the thermal environment affect continuous current handling?
What are the mounting considerations for assembly?
Is this device suited for automotive specification programmes?
Related links
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS138WH6433XTMA1
