Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1

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Subtotal (1 pack of 15 units)*

TWD454.50

(exc. GST)

TWD477.30

(inc. GST)

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Units
Per unit
Per Pack*
15 - 15TWD30.30TWD454.50
30 - 30TWD29.50TWD442.50
45 +TWD29.20TWD438.00

*price indicative

Packaging Options:
RS Stock No.:
214-9110
Mfr. Part No.:
IPS80R900P7AKMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS P7

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Forward Voltage Vf

900mV

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

45W

Maximum Operating Temperature

150°C

Length

6.7mm

Standards/Approvals

No

Width

2.35mm

Height

6.22mm

Automotive Standard

No

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are Easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs.

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