Infineon CoolMOS P7 N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1

The image is for reference only, please refer to product details and specifications

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal (1 reel of 2500 units)*

TWD33,000.00

(exc. GST)

TWD34,650.00

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Reel*
2500 - 10000TWD13.20TWD33,000.00
12500 +TWD12.80TWD32,000.00

*price indicative

RS Stock No.:
214-9050
Mfr. Part No.:
IPD80R3K3P7ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

18W

Forward Voltage Vf

900mV

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

5.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6.22mm

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

No

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.

It comes with Fully optimized portfolio

Integrated Zener Diode ESD protection

Related links