Infineon OptiMOS N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

RS Stock No.:: 214-8969
Mfr. Part No.:: BSC010N04LSIATMA1
Manufacturer:: Infineon

Infineon OptiMOS N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

The image is for reference only, please refer to product details and specifications

Bulk discount available

View bulk pricing options

Subtotal (1 reel of 5000 units)*

TWD212,500.00

(exc. GST)

TWD223,100.00

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
5000 - 20000	TWD42.50	TWD212,500.00
25000 +	TWD41.70	TWD208,500.00

*price indicative

RS Stock No.:: 214-8969
Mfr. Part No.:: BSC010N04LSIATMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	275A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.05mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	87nC
	Maximum Power Dissipation Pd	139W
	Forward Voltage Vf	700mV
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Length	5.35mm
	Width	6.1mm
	Standards/Approvals	No
	Height	1.2mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 275A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.05mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 87nC
	Maximum Power Dissipation Pd 139W
	Forward Voltage Vf 700mV
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Length 5.35mm
	Width 6.1mm
	Standards/Approvals No
	Height 1.2mm
	Automotive Standard No

Datasheet - BSC010N04LSIATMA1

Infineon OptiMOS Series MOSFET, 40V Drain Source Voltage, 275A Continuous Drain Current - BSC010N04LSIATMA1

This MOSFET is a high‑current switching component designed for demanding power applications. It operates across a very wide ambient temperature range and is intended for surface‑mounted PCB implementations in Compact assemblies. The device features an enhancement‑mode N‑channel and supports gate‑drive voltages appropriate for robust switching control.

Features and Benefits:

• Low conduction resistance delivers efficient high‑current switching
• High continuous drain current enables substantial load driving
• 40 V drain‑source rating permits medium‑voltage system use
• 139 W dissipation supports elevated power handling
• 87 nC typical gate charge allows predictable switching energy
• 20 V gate‑source tolerance provides headroom for gate drive

Applications

• Suitable for high‑current DC motor drives
• Used for power distribution in battery systems
• Ideal for synchronous rectification in converters
• Can be used for server and telecoms power stages
• Used with inverter modules requiring robust switches

What temperature extremes can it withstand in operation?

It is rated for continuous use from −55 °C up to +175 °C.

What package and mounting style does it use for PCB assembly?

It is supplied in a TDSON package intended for surface mounting.

How many electrical connections are available for layout and routing?

The device uses an 8‑pin configuration for power and gate connections.

What gate drive behaviour should designers expect during switching?

Designers should plan for a typical gate charge of 87 nC when calculating drive losses and switching times.

What physical footprint should be allowed when placing the component?

The package measures 5.35 mm in length, 6.1 mm in width and 1.2 mm in height.