Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7ATMA1
- RS Stock No.:
- 214-4388
- Mfr. Part No.:
- IPD60R360P7ATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 615 | TWD44.30 | TWD664.50 |
| 630 - 1230 | TWD43.20 | TWD648.00 |
| 1245 + | TWD42.50 | TWD637.50 |
*price indicative
- RS Stock No.:
- 214-4388
- Mfr. Part No.:
- IPD60R360P7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 41W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.35mm | |
| Length | 6.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 41W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.35mm | ||
Length 6.65mm | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 9A Continuous Drain Current - IPD60R360P7ATMA1
This MOSFET is a high-voltage N-channel switching transistor designed for surface-mounted power conversion and switching applications. It operates across a wide temperature span suitable for demanding environments and is intended to handle high drain-to-source voltages while providing controlled conduction and switching behaviour in power supplies and related circuits.
Features and Benefits:
• 600V maximum drain-to-source voltage enables high-voltage designs
• 9A continuous drain current supports substantial load capability
• 360mΩ Rds(on) limits conduction losses at operating currents
• 13nC typical gate charge reduces switching energy and stress
• 20V maximum gate-to-source withstands robust drive margins
• 41W power dissipation allows significant thermal loading
• 9A continuous drain current supports substantial load capability
• 360mΩ Rds(on) limits conduction losses at operating currents
• 13nC typical gate charge reduces switching energy and stress
• 20V maximum gate-to-source withstands robust drive margins
• 41W power dissipation allows significant thermal loading
Applications
• Suitable for offline switch-mode power supplies
• Ideal for high-voltage DC-DC converters
• Used with bridge and clamped switching topologies
• Can be used for industrial motor-drive front ends
• Appropriate for telecom power distribution modules
• Ideal for high-voltage DC-DC converters
• Used with bridge and clamped switching topologies
• Can be used for industrial motor-drive front ends
• Appropriate for telecom power distribution modules
What packaging and mounting considerations should I plan for?
It is supplied in a TO-252 package intended for surface-mount assembly
ensure an appropriate land pattern and thermal vias if board-level heat spreading is required.
How does thermal range affect deployment?
The device is specified to operate from -55°C up to 150°C so it can be used in environments with extreme temperature variations without derating for ambient extremes within that range.
What gate-drive constraints apply during layout?
Keep gate leads short to minimise inductance given the 13nC gate charge and respect the ±20V gate-to-source absolute limit during drive and transient conditions.
How should I assess current capability in my design?
Use the 9A continuous drain current rating as a baseline and verify system-level thermal resistance and cooling to maintain junction temperatures within the specified limits.
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R360P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPA60R360P7SXKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180P7ATMA1
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