Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V N, 3-Pin TO-220 IPA80R450P7XKSA1
- RS Stock No.:
- 214-4357
- Mfr. Part No.:
- IPA80R450P7XKSA1
- Manufacturer:
- Infineon
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TWD528.00
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TWD554.40
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD52.80 | TWD528.00 |
| 20 - 20 | TWD51.60 | TWD516.00 |
| 30 + | TWD50.80 | TWD508.00 |
*price indicative
- RS Stock No.:
- 214-4357
- Mfr. Part No.:
- IPA80R450P7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 29W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.68mm | |
| Height | 4.85mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series 800V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 29W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 10.68mm | ||
Height 4.85mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 800V CoolMOS P7 Series MOSFET, 800V Drain Source Voltage, 11A Continuous Drain Current - IPA80R450P7XKSA1
This MOSFET is a high-voltage N-channel switching device designed for power conversion and industrial applications. It operates across a wide ambient range and is intended for through-hole mounting in conventional power assemblies, providing a robust option where elevated voltage handling and moderate current capability are required.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching applications
• 11A continuous drain current supports substantial load currents
• 450mΩ RDS(on) minimises conduction losses in power stages
• 24nC typical gate charge allows efficient switching performance
• 29W maximum power dissipation handles elevated thermal stress
• 30V gate tolerance permits flexible gate-drive amplitudes
• 11A continuous drain current supports substantial load currents
• 450mΩ RDS(on) minimises conduction losses in power stages
• 24nC typical gate charge allows efficient switching performance
• 29W maximum power dissipation handles elevated thermal stress
• 30V gate tolerance permits flexible gate-drive amplitudes
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive front-ends
• Used with switch-mode power systems in energy
• Can be used for line-side switching in booster circuits
• Suitable for laboratory and prototyping through-hole assemblies
• Ideal for industrial motor-drive front-ends
• Used with switch-mode power systems in energy
• Can be used for line-side switching in booster circuits
• Suitable for laboratory and prototyping through-hole assemblies
What temperature range can it reliably operate within?
The device is specified to function from -55°C up to 150°C, supporting operation in both low-temperature and high-temperature environments.
How is it packaged for mounting and cooling?
It is supplied in a TO-220 package intended for through-hole mounting, permitting connection to heatsinks or chassis for thermal management.
What gate-drive considerations should be observed?
The maximum gate-source voltage is 30V and the typical total gate charge is 24nC, so driver selection should balance voltage headroom and drive strength to achieve the desired switching speed.
How does its conduction resistance affect design?
With a maximum drain-source on-resistance of 450mΩ, designers should account for conduction losses at expected currents and size heatsinking accordingly.
Related links
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V N, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPAN80R450P7XKSA1
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- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V, 3-Pin TO-247 IPW80R360P7XKSA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220