Infineon OptiMOS Type N-Channel MOSFET, 40 A, 40 V N, 8-Pin PQFN BSZ034N04LSATMA1
- RS Stock No.:
- 214-4339
- Mfr. Part No.:
- BSZ034N04LSATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
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TWD592.50
(exc. GST)
TWD622.20
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 1245 | TWD39.50 | TWD592.50 |
| 1260 - 2490 | TWD38.50 | TWD577.50 |
| 2505 + | TWD36.20 | TWD543.00 |
*price indicative
- RS Stock No.:
- 214-4339
- Mfr. Part No.:
- BSZ034N04LSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ034N04LSATMA1
This MOSFET is a surface-mount N-channel switching transistor designed for power conversion and high-current applications. It operates across a wide temperature span and is intended for compact, board-mounted designs where low conduction loss and fast switching are required.
Features and Benefits:
• Very low on-resistance 4.6mΩ reduces conduction losses
• High continuous drain current 40A supports heavy loads
• 40V drain-source rating enables mid-voltage power stages
• Typical gate charge 25nC yields faster switching response
• Power dissipation 52W permits substantial heat handling
• Gate-source limit 20V protects against excessive drive voltages
• High continuous drain current 40A supports heavy loads
• 40V drain-source rating enables mid-voltage power stages
• Typical gate charge 25nC yields faster switching response
• Power dissipation 52W permits substantial heat handling
• Gate-source limit 20V protects against excessive drive voltages
Applications
• Suitable for DC-DC converter switching stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge circuits
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load modules
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge circuits
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load modules
What mounting approach does it require on a board?
It is supplied in a PQFN surface-mount package designed for soldered PCB attachment and thermal conduction through the package land pattern.
How does its thermal range affect deployment?
Rated from -55 to 150°C it can be placed in environments with extreme ambient and elevated junction temperatures, subject to appropriate thermal design.
What gate drive considerations apply for switching performance?
With a typical gate charge of 25nC, designers should provide sufficient gate-drive current to achieve targeted transition speeds while managing EMI.
Is it configured for enhancement-mode operation?
The device uses an N-channel conduction mode suitable for low-side and high-side configurations when paired with appropriate gate drive and level shifting.
Related links
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