DiodesZetex DMTH10H2M5STLW Type N-Channel MOSFET, 248 A, 100 V Enhancement, 8-Pin PowerDI1012 DMTH10H2M5STLW-13
- RS Stock No.:
- 213-9226
- Mfr. Part No.:
- DMTH10H2M5STLW-13
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD284.00
(exc. GST)
TWD298.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,500 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 374 | TWD142.00 | TWD284.00 |
| 376 - 748 | TWD138.00 | TWD276.00 |
| 750 + | TWD136.50 | TWD273.00 |
*price indicative
- RS Stock No.:
- 213-9226
- Mfr. Part No.:
- DMTH10H2M5STLW-13
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 248A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMTH10H2M5STLW | |
| Package Type | PowerDI1012 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 230.8W | |
| Typical Gate Charge Qg @ Vgs | 124.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Width | 11.68 mm | |
| Length | 9.9mm | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 248A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMTH10H2M5STLW | ||
Package Type PowerDI1012 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 230.8W | ||
Typical Gate Charge Qg @ Vgs 124.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Width 11.68 mm | ||
Length 9.9mm | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
The DiodesZetex DMTH10H2M5STLW series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
High conversion efficiency
Wet table flank for improved optical inspection
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