onsemi NTH N-Channel MOSFET & Diode, 31 A, 1.2 kV Enhancement, 3-Pin TO-247 NTHL080N120SC1A
- RS Stock No.:
- 205-2502
- Mfr. Part No.:
- NTHL080N120SC1A
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD469.00
(exc. GST)
TWD492.45
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 209 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 112 | TWD469.00 |
| 113 - 224 | TWD458.00 |
| 225 + | TWD451.00 |
*price indicative
- RS Stock No.:
- 205-2502
- Mfr. Part No.:
- NTHL080N120SC1A
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 178W | |
| Forward Voltage Vf | 4V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.37mm | |
| Standards/Approvals | RoHS | |
| Length | 39.75mm | |
| Height | 4.48mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 178W | ||
Forward Voltage Vf 4V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 150°C | ||
Width 15.37mm | ||
Standards/Approvals RoHS | ||
Length 39.75mm | ||
Height 4.48mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
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