onsemi SUPERFET III Type N-Channel MOSFET & Diode, 24 A, 650 V Enhancement, 3-Pin TO-263 FCB125N65S3
- RS Stock No.:
- 205-2470
- Mfr. Part No.:
- FCB125N65S3
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD690.00
(exc. GST)
TWD724.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Supply shortage
- Plus 715 left, shipping from January 27, 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 195 | TWD138.00 | TWD690.00 |
| 200 - 395 | TWD134.80 | TWD674.00 |
| 400 + | TWD132.40 | TWD662.00 |
*price indicative
- RS Stock No.:
- 205-2470
- Mfr. Part No.:
- FCB125N65S3
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 181W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.6mm | |
| Standards/Approvals | RoHS | |
| Width | 9.6 mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 181W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 14.6mm | ||
Standards/Approvals RoHS | ||
Width 9.6 mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series N-Channel MOSFET is high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Continuous Drain Current rating is 24A
Drain to source on resistance rating is 125mohm
Ultra low gate charge
Low stored energy in output capacitance
100% avalanche tested
Package type is D2-PAK
Related links
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220 NTPF125N65S3H
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 8-Pin TDFN
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 8-Pin TDFN NTMT125N65S3H
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-252
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220