Vishay SQJQ144AE Type N-Channel MOSFET, 575 A, 40 V Enhancement, 8-Pin PowerPAK (8x8L) SQJQ144AE-T1_GE3
- RS Stock No.:
- 204-7198
- Mfr. Part No.:
- SQJQ144AE-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD628.00
(exc. GST)
TWD659.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 490 | TWD62.80 | TWD628.00 |
| 500 - 990 | TWD61.70 | TWD617.00 |
| 1000 + | TWD60.60 | TWD606.00 |
*price indicative
- RS Stock No.:
- 204-7198
- Mfr. Part No.:
- SQJQ144AE-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 575A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJQ144AE | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 600W | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.2mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 8mm | |
| Width | 1.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 575A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJQ144AE | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 600W | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 8.2mm | ||
Standards/Approvals AEC-Q101 | ||
Height 8mm | ||
Width 1.7 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has a thin 1.6 mm package.
Very low thermal resistance
TrenchFET Gen IV power MOSFET
Related links
- Vishay SQJQ144AE Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK (8x8L)
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- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJ184EP-T1_GE3