onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5737
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 450 units)*
TWD294,345.00
(exc. GST)
TWD309,060.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 1800 | TWD654.10 | TWD294,345.00 |
| 2250 + | TWD641.00 | TWD288,450.00 |
*price indicative
- RS Stock No.:
- 202-5737
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 319W | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 170°C | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 319W | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 170°C | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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