onsemi NTH Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5704
- Mfr. Part No.:
- NTHL040N120SC1
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 450 units)*
TWD222,075.00
(exc. GST)
TWD233,181.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 1800 | TWD493.50 | TWD222,075.00 |
| 2250 + | TWD483.60 | TWD217,620.00 |
*price indicative
- RS Stock No.:
- 202-5704
- Mfr. Part No.:
- NTHL040N120SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 348W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.25mm | |
| Standards/Approvals | No | |
| Height | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 348W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Operating Temperature 175°C | ||
Length 20.25mm | ||
Standards/Approvals No | ||
Height 15.87mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Related links
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTHL040N120SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTH4L080N120SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTH4L160N120SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247-4L NTH4L013N120M3S
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247