onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L080N120SC1
- RS Stock No.:
- 202-5701
- Mfr. Part No.:
- NTH4L080N120SC1
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD650.00
(exc. GST)
TWD682.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 442 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 112 | TWD325.00 | TWD650.00 |
| 114 + | TWD317.50 | TWD635.00 |
*price indicative
- RS Stock No.:
- 202-5701
- Mfr. Part No.:
- NTH4L080N120SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 170W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.2mm | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 170W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.2mm | ||
Height 22.74mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.
110mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Related links
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 NTHL160N120SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTH4L160N120SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTHL040N120SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247-4L NTH4L013N120M3S