Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3

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Subtotal (1 reel of 3000 units)*

TWD60,600.00

(exc. GST)

TWD63,630.00

(inc. GST)

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Per unit
Per Reel*
3000 - 12000TWD20.20TWD60,600.00
15000 +TWD19.80TWD59,400.00

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RS Stock No.:
200-6852
Mfr. Part No.:
SiZ240DT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET Gen IV

Package Type

PowerPAIR 3 x 3S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00805Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15.2nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

33W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.4 mm

Length

3.4mm

Height

0.8mm

Number of Elements per Chip

2

Automotive Standard

No

The Vishay SiZ240DT-T1-GE3 is a dual N-channel 40V (D-S) MOSFETs.

TrenchFET Gen IV power MOSFETs

Integrated MOSFET half-bridge power stage

100 % Rg and UIS tested

Optimized Qgs/Qgs ratio improves switching characteristics

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