Vishay SQD10950E Type N-Channel MOSFET, 11.5 A, 250 V Enhancement, 3-Pin TO-252 SQD10950E_GE3
- RS Stock No.:
- 200-6793
- Mfr. Part No.:
- SQD10950E_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD1,155.00
(exc. GST)
TWD1,212.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 08, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | TWD46.20 | TWD1,155.00 |
| 500 - 975 | TWD45.00 | TWD1,125.00 |
| 1000 + | TWD44.40 | TWD1,110.00 |
*price indicative
- RS Stock No.:
- 200-6793
- Mfr. Part No.:
- SQD10950E_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | SQD10950E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 62W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Standards/Approvals | No | |
| Width | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series SQD10950E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 62W | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 10.41mm | ||
Standards/Approvals No | ||
Width 2.38mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQD10950E_GE3 is a automotive N-channel 250V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
Package with low thermal resistance
100 % Rg and UIS tested
AEC-Q101 qualified
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