STMicroelectronics Type N-Channel MOSFET, 72 A, 600 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 195-2680
- Mfr. Part No.:
- STWA75N60M6
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
TWD11,676.00
(exc. GST)
TWD12,259.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 15, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | TWD389.20 | TWD11,676.00 |
| 150 + | TWD373.60 | TWD11,208.00 |
*price indicative
- RS Stock No.:
- 195-2680
- Mfr. Part No.:
- STWA75N60M6
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 446W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Width | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 446W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Width 5.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Related links
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STWA75N60M6
- STMicroelectronics Single 1 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STWA75N60DM6
- STMicroelectronics Type N-Channel MOSFET 650 V, 4-Pin TO-247-4 STW68N65DM6-4AG
- STMicroelectronics MDmesh DM6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 STWA68N65DM6AG
- Wolfspeed Type N-Channel MOSFET 1700 V Enhancement, 3-Pin TO-247 C2M0045170D
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 STWA68N65DM6