onsemi N-Channel MOSFET, 337 A, 80 V Enhancement, 8-Pin DFN NVMTS1D2N08H
- RS Stock No.:
- 195-2676
- Mfr. Part No.:
- NVMTS1D2N08H
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Supply shortage
Due to a global supply shortage, we don't know when this will be back in stock.
- RS Stock No.:
- 195-2676
- Mfr. Part No.:
- NVMTS1D2N08H
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 337A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 147nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 8mm | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 337A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 147nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 8mm | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
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