onsemi NTMYS010N04CL Type N-Channel MOSFET, 38 A, 40 V Enhancement, 4-Pin LFPAK NTMYS010N04CLTWG
- RS Stock No.:
- 195-2531
- Mfr. Part No.:
- NTMYS010N04CLTWG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 30 units)*
TWD1,548.00
(exc. GST)
TWD1,625.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 720 | TWD51.60 | TWD1,548.00 |
| 750 - 1470 | TWD50.30 | TWD1,509.00 |
| 1500 + | TWD49.50 | TWD1,485.00 |
*price indicative
- RS Stock No.:
- 195-2531
- Mfr. Part No.:
- NTMYS010N04CLTWG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMYS010N04CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 17.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Maximum Power Dissipation Pd | 28W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMYS010N04CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 17.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Maximum Power Dissipation Pd 28W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
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