STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 53 A, 300 V Enhancement, 3-Pin TO-263 STB45N30M5
- RS Stock No.:
- 192-4977
- Mfr. Part No.:
- STB45N30M5
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 2 units)*
TWD516.00
(exc. GST)
TWD541.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
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- Shipping from May 29, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 248 | TWD258.00 | TWD516.00 |
| 250 - 498 | TWD252.50 | TWD505.00 |
| 500 + | TWD247.50 | TWD495.00 |
*price indicative
- RS Stock No.:
- 192-4977
- Mfr. Part No.:
- STB45N30M5
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | TO-263 | |
| Series | MDmesh M5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 4.37mm | |
| Width | 9.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type TO-263 | ||
Series MDmesh M5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 4.37mm | ||
Width 9.35 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
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