STMicroelectronics Type N-Channel MOSFET, 5 A, 650 V Enhancement, 3-Pin IPAK STD5NM60T4
- RS Stock No.:
- 188-8455
- Mfr. Part No.:
- STD5NM60T4
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD175.00
(exc. GST)
TWD183.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 5 unit(s) ready to ship from another location
- Plus 115 unit(s) shipping from February 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 620 | TWD35.00 | TWD175.00 |
| 625 - 1245 | TWD34.20 | TWD171.00 |
| 1250 + | TWD33.60 | TWD168.00 |
*price indicative
- RS Stock No.:
- 188-8455
- Mfr. Part No.:
- STD5NM60T4
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.4 mm | |
| Height | 6.2mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 150°C | ||
Width 2.4 mm | ||
Height 6.2mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performances.
Low input capacitance and gate charge
HIgh dv/dt and avalanche capabilities
Low gate input resistance
Applications
Switching applications
Related links
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin IPAK
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- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK STD1NK60-1
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK STD3NK80Z-1
- STMicroelectronics MDmesh Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin IPAK (TO-251)