STMicroelectronics Type N-Channel MOSFET, 7.5 A, 60 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 188-8296
- Mfr. Part No.:
- STS7NF60L
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
TWD70,750.00
(exc. GST)
TWD74,300.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | TWD28.30 | TWD70,750.00 |
| 5000 - 7500 | TWD27.50 | TWD68,750.00 |
| 10000 + | TWD26.70 | TWD66,750.00 |
*price indicative
- RS Stock No.:
- 188-8296
- Mfr. Part No.:
- STS7NF60L
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Length | 5mm | |
| Height | 1.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4mm | ||
Length 5mm | ||
Height 1.65mm | ||
Automotive Standard No | ||
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
TYPICAL RDS(on) = 0.017 Ω
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT INOMADIC EQUIPMENT
POWER MANAGEMENT IPORTABLE/DESKTOP Pcs
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