Vishay SiSS30LDN N-Channel MOSFET, 55.5 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SISS30LDN-T1-GE3
- RS Stock No.:
- 188-5051
- Mfr. Part No.:
- SISS30LDN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD446.00
(exc. GST)
TWD468.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 15, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD44.60 | TWD446.00 |
| 750 - 1490 | TWD43.50 | TWD435.00 |
| 1500 + | TWD42.70 | TWD427.00 |
*price indicative
- RS Stock No.:
- 188-5051
- Mfr. Part No.:
- SISS30LDN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiSS30LDN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32.5nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 57W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Height | 780μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiSS30LDN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32.5nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 57W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Height 780μm | ||
Automotive Standard No | ||
N-Channel 80 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
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