Vishay SiS862ADN Type N-Channel MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SIS862ADN-T1-GE3
- RS Stock No.:
- 188-4951
- Distrelec Article No.:
- 304-38-850
- Mfr. Part No.:
- SIS862ADN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD522.50
(exc. GST)
TWD548.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Being discontinued
- Final 8,900 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD20.90 | TWD522.50 |
| 750 - 1475 | TWD20.40 | TWD510.00 |
| 1500 + | TWD20.10 | TWD502.50 |
*price indicative
- RS Stock No.:
- 188-4951
- Distrelec Article No.:
- 304-38-850
- Mfr. Part No.:
- SIS862ADN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiS862ADN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19.8nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Height | 1.07mm | |
| Width | 3.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiS862ADN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19.8nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Height 1.07mm | ||
Width 3.15 mm | ||
Automotive Standard No | ||
N-Channel 60 V (D-S) MOSFET
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
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