Vishay SUP60020E N-Channel MOSFET, 150 A, 80 V Enhancement, 3-Pin TO-220 SUP60020E-GE3
- RS Stock No.:
- 188-4929
- Mfr. Part No.:
- SUP60020E-GE3
- Manufacturer:
- Vishay
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 188-4929
- Mfr. Part No.:
- SUP60020E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SUP60020E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 151.2nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.51mm | |
| Standards/Approvals | No | |
| Width | 4.65mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SUP60020E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 151.2nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.51mm | ||
Standards/Approvals No | ||
Width 4.65mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
N-Channel 80 V (D-S) MOSFET.
TrenchFET® power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through Vplateau
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