Vishay SiSS92DN N-Channel MOSFET, 12.3 A, 250 V Enhancement, 8-Pin PowerPAK 1212 SiSS92DN-T1-GE3

The image is for reference only, please refer to product details and specifications

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
188-4908
Mfr. Part No.:
SiSS92DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

12.3A

Maximum Drain Source Voltage Vds

250V

Series

SiSS92DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.8W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10.4nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Height

780μm

Standards/Approvals

No

Length

3.3mm

Width

3.3mm

Automotive Standard

No

N-Channel 250 V (D-S) MOSFET.

TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss

Leadership RDS(on) and RDS-Coss FOM

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy