ROHM RUF025N02 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-323 RUF025N02TL
- RS Stock No.:
- 183-5622
- Mfr. Part No.:
- RUF025N02TL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 30 units)*
TWD399.00
(exc. GST)
TWD418.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 120 | TWD13.30 | TWD399.00 |
| 150 - 570 | TWD12.90 | TWD387.00 |
| 600 - 1470 | TWD12.60 | TWD378.00 |
| 1500 + | TWD12.30 | TWD369.00 |
*price indicative
- RS Stock No.:
- 183-5622
- Mfr. Part No.:
- RUF025N02TL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RUF025N02 | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 800mW | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.1mm | |
| Width | 1.8mm | |
| Height | 0.82mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RUF025N02 | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 800mW | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.1mm | ||
Width 1.8mm | ||
Height 0.82mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Power MOSFETs are MADE as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering Compact types, high-power types and complex types to meet various needs in the market.
Low voltage(1.5V) drive type
Nch Small-signal MOSFET
Small Surface Mount Package
Pb Free
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