DiodesZetex DMP Type P-Channel MOSFET, 0.6 A, 450 V Enhancement, 4-Pin SOT-223 DMP45H21DHE-13
- RS Stock No.:
- 182-7460
- Mfr. Part No.:
- DMP45H21DHE-13
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD557.50
(exc. GST)
TWD585.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 275 unit(s) shipping from September 21, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 600 | TWD22.30 | TWD557.50 |
| 625 - 1225 | TWD21.70 | TWD542.50 |
| 1250 + | TWD21.40 | TWD535.00 |
*price indicative
- RS Stock No.:
- 182-7460
- Mfr. Part No.:
- DMP45H21DHE-13
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.6A | |
| Maximum Drain Source Voltage Vds | 450V | |
| Series | DMP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 12.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.55mm | |
| Width | 3.55mm | |
| Standards/Approvals | No | |
| Height | 1.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.6A | ||
Maximum Drain Source Voltage Vds 450V | ||
Series DMP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 12.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.55mm | ||
Width 3.55mm | ||
Standards/Approvals No | ||
Height 1.65mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply
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