DiodesZetex Dual 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 6-Pin UDFN DMP2075UFDB-7
- RS Stock No.:
- 182-7162
- Mfr. Part No.:
- DMP2075UFDB-7
- Manufacturer:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
TWD755.00
(exc. GST)
TWD793.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | TWD15.10 | TWD755.00 |
| 750 - 1450 | TWD14.80 | TWD740.00 |
| 1500 + | TWD14.50 | TWD725.00 |
*price indicative
- RS Stock No.:
- 182-7162
- Mfr. Part No.:
- DMP2075UFDB-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 137mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Forward Voltage Vf | -0.7V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | +150°C | |
| Length | 2.07mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0 | |
| Width | 2.07mm | |
| Height | 550μm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 137mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Forward Voltage Vf -0.7V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature +150°C | ||
Length 2.07mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0 | ||
Width 2.07mm | ||
Height 550μm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
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