onsemi FDMS86181 N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181
- RS Stock No.:
- 181-1895
- Mfr. Part No.:
- FDMS86181
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD693.00
(exc. GST)
TWD727.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 1,965 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | TWD138.60 | TWD693.00 |
| 750 - 1495 | TWD135.60 | TWD678.00 |
| 1500 + | TWD133.40 | TWD667.00 |
*price indicative
- RS Stock No.:
- 181-1895
- Mfr. Part No.:
- FDMS86181
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 124A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | FDMS86181 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Length | 5.85mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 124A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series FDMS86181 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 5mm | ||
Standards/Approvals No | ||
Length 5.85mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
This product is general usage and suitable for many different applications.
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