Vishay Single 1 Type N-Channel MOSFET, 7.7 A, 100 V, 3-Pin IRFU120PBF
- RS Stock No.:
- 180-8351
- Mfr. Part No.:
- IRFU120PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 75 units)*
TWD1,267.50
(exc. GST)
TWD1,330.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,475 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | TWD16.90 | TWD1,267.50 |
| 150 - 225 | TWD14.90 | TWD1,117.50 |
| 300 + | TWD14.50 | TWD1,087.50 |
*price indicative
- RS Stock No.:
- 180-8351
- Mfr. Part No.:
- IRFU120PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.27Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | Directive 2011/65/EU, RoHS, JEDEC JS709A | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.27Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals Directive 2011/65/EU, RoHS, JEDEC JS709A | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFU120 is a N-channel power MOSFET having drain to source(Vds) voltage of 100V.The gate to source voltage(VGS) is 20V. It is having DPAK (TO-252) and IPAK (TO-251) package. It offers drain to source resistance (RDS.) 0..27ohms at 10VGS.
Dynamic dV/dt rating
Repetitive avalanche rated
Surface mount
Related links
- Vishay Single 1 Type N-Channel MOSFET 100 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 500 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 800 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 200 V, 3-Pin
- Vishay Single 1 Type N-Channel MOSFET 100 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 50 V, 3-Pin TO-220AB