N-Channel MOSFET, 8 A, 40 V, 3-Pin SOT-23 Vishay SQ2318AES-T1_GE3

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 31mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 8A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.