N-Channel MOSFET, 3.1 A, 100 V, 3-Pin SOT-23 Vishay SI2392ADS-T1-GE3

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• Boost converters
• DC/DC converters
• LED backlighting in LCD TVs
• Load switch
• Power management for mobile computing

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.