Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 178-7486
- Mfr. Part No.:
- BSC600N25NS3GATMA1
- Manufacturer:
- Infineon
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TWD325,000.00
(exc. GST)
TWD341,250.00
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | TWD65.00 | TWD325,000.00 |
| 25000 + | TWD63.70 | TWD318,500.00 |
*price indicative
- RS Stock No.:
- 178-7486
- Mfr. Part No.:
- BSC600N25NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TDSON | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TDSON | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 25A Continuous Drain Current - BSC600N25NS3GATMA1
This MOSFET is a high-voltage N-channel transistor designed for power switching in surface‑mount applications. It operates across an extended thermal range and is suited to circuits requiring robust drain‑to‑source voltage handling and moderate continuous current. The device is supplied in an 8‑pin TDSON package for compact board‑level integration.
Features and Benefits:
• 250V drain voltage enables high‑voltage switching applications
• 25A continuous current supports substantial load handling
• 60mΩ Rds(on) reduces conduction losses during operation
• 22nC typical gate charge enables responsive switching performance
• 125W maximum power dissipation allows elevated thermal loading
• 25A continuous current supports substantial load handling
• 60mΩ Rds(on) reduces conduction losses during operation
• 22nC typical gate charge enables responsive switching performance
• 125W maximum power dissipation allows elevated thermal loading
Applications
• Suitable for high‑voltage DC-DC converters on power boards
• Ideal for synchronous rectification in power supplies
• Used with motor‑drive stages requiring 25A handling
• Can be used for switch‑mode power supplies with tight footprints
• Appropriate for industrial switching circuits exposed to temperature extremes
• Ideal for synchronous rectification in power supplies
• Used with motor‑drive stages requiring 25A handling
• Can be used for switch‑mode power supplies with tight footprints
• Appropriate for industrial switching circuits exposed to temperature extremes
What gate voltage limits should be observed during design?
The gate‑source voltage must not exceed 20V to prevent gate‑oxide stress and ensure device reliability.
How does the channel type affect circuit topology choices?
As an N‑channel enhancement device, it is typically placed on the low‑side of switches or used in synchronous topologies for improved efficiency.
What thermal environment can it tolerate during operation?
The component functions from -55°C up to 150°C, permitting use in wide‑temperature installations where ambient conditions vary.
Which package mounting considerations are recommended?
The TDSON surface‑mount format requires appropriate PCB thermal pads and soldering profiles to manage heat dissipation and mechanical stability.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 8-Pin TDSON BSC600N25NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON