onsemi NVMFS6H801N Type N-Channel MOSFET, 157 A, 80 V Enhancement, 5-Pin DFN NVMFS6H801NT1G
- RS Stock No.:
- 178-4450
- Mfr. Part No.:
- NVMFS6H801NT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD653.00
(exc. GST)
TWD685.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 480 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 370 | TWD65.30 | TWD653.00 |
| 380 - 740 | TWD63.60 | TWD636.00 |
| 750 + | TWD62.80 | TWD628.00 |
*price indicative
- RS Stock No.:
- 178-4450
- Mfr. Part No.:
- NVMFS6H801NT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NVMFS6H801N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NVMFS6H801N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H801NWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
DC/DC converter
Load Switch
Related links
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN NTMFS6H801NT1G
- Texas Instruments NexFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin VSON CSD19502Q5BT
- Texas Instruments NexFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin VSON
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementS1X(S
- onsemi Type N-Channel MOSFET 40 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN