onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 178-4258
- Mfr. Part No.:
- NTPF082N65S3F
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD7,270.00
(exc. GST)
TWD7,633.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 250 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD145.40 | TWD7,270.00 |
| 100 - 150 | TWD142.40 | TWD7,120.00 |
| 200 + | TWD139.60 | TWD6,980.00 |
*price indicative
- RS Stock No.:
- 178-4258
- Mfr. Part No.:
- NTPF082N65S3F
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.12mm | |
| Standards/Approvals | No | |
| Length | 10.63mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Operating Temperature 150°C | ||
Height 16.12mm | ||
Standards/Approvals No | ||
Length 10.63mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features
700 V @ TJ = 150 oC
Ultra Low Gate Charge (Typ. Qg = 70 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge Circuit
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
Solar / UPS
EV charger
Related links
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