MPN

onsemi FDD Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-252

RS Stock No.:: 178-4231
Mfr. Part No.:: FDD86250-F085
Manufacturer:: onsemi

onsemi FDD Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-252

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 2500 units)*

TWD81,750.00

(exc. GST)

TWD85,850.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

Last RS stock

Final 5,000 unit(s), ready to ship from another location

Units	Per unit	Per Reel*
2500 - 10000	TWD32.70	TWD81,750.00
12500 +	TWD31.70	TWD79,250.00

*price indicative

RS Stock No.:: 178-4231
Mfr. Part No.:: FDD86250-F085
Manufacturer:: onsemi

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	150V
	Series	FDD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	160W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	28nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.25V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.73mm
	Width	6.22 mm
	Height	2.39mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 150V
	Series FDD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 160W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 28nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.25V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.73mm
	Width 6.22 mm
	Height 2.39mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: PH

N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ

Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A

Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A

UIS Capability

Applications:

Automotive Engine Control

PowerTrain Management

Solenoid and Motor Drivers

Distributed Power Architectures and VRM

Primary Switch for 12V Systems

End Products:

Integrated Starter/Alternator

onsemi FDD Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-252

FREE delivery for orders over NT$1,300.00

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