Vishay Siliconix SiS110DN N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

RS Stock No.:: 178-3962P
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

Vishay Siliconix SiS110DN N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

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Subtotal 25 units (supplied on a continuous strip)*

TWD665.00

(exc. GST)

TWD698.25

(inc. GST)

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Shipping from January 27, 2027

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Units	Per unit
25 +	TWD26.60

*price indicative

RS Stock No.:: 178-3962P
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay Siliconix
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14.2A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerPAK 1212
	Series	SiS110DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	8.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	24W
	Maximum Operating Temperature	150°C
	Width	3.15mm
	Standards/Approvals	RoHS
	Length	3.15mm
	Height	1.07mm
	Automotive Standard	No

	Select all
	Brand Vishay Siliconix
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14.2A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerPAK 1212
	Series SiS110DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 8.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 24W
	Maximum Operating Temperature 150°C
	Width 3.15mm
	Standards/Approvals RoHS
	Length 3.15mm
	Height 1.07mm
	Automotive Standard No

Datasheet

RoHS Status: Exempt

COO (Country of Origin):: CN

Vishay SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3

This MOSFET is a surface-mount N-channel transistor designed for switching and power management in compact electronic assemblies. It operates across a wide ambient range and is intended for applications requiring a balance of voltage handling, current capability and moderate gate charge for efficient control.

Features and Benefits:

• 100V drain tolerance enables high-voltage switching capability
• 70 mΩ low RDS(on) reduces conduction losses
• 14.2A continuous drain current supports substantial load currents
• 24W power dissipation allows sustained power handling
• 8.5 nC typical gate charge facilitates responsive gate driving
• ±20V gate-source rating offers robust gate-voltage margin

Applications

• Suitable for DC-DC converter switching stages
• Ideal for motor-drive low-side switching
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution

What thermal range can I expect for reliable operation?

The device is specified to function from -55 °C up to 150 °C, allowing use in environments with large temperature variation.

How does the package support PCB assembly and cooling?

It is supplied in a compact PowerPAK1212 package for low-profile surface-mount placement and reasonable thermal transfer to the PCB.

What gate-drive considerations apply given the gate charge?

With a typical gate charge of 8.5 nC, gate drivers should source and sink sufficient current to switch at the desired speed without excessive drive losses.

Are there any regulatory restrictions noted for this component?

The component conforms to RoHS requirements for restricted substances in electronic assemblies.