Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3
- RS Stock No.:
- 178-3934
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD398.00
(exc. GST)
TWD417.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,820 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | TWD79.60 | TWD398.00 |
| 750 - 1495 | TWD77.60 | TWD388.00 |
| 1500 + | TWD76.40 | TWD382.00 |
*price indicative
- RS Stock No.:
- 178-3934
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 900μΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Height | 1.07mm | |
| Standards/Approvals | No | |
| Length | 5.99mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 900μΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Height 1.07mm | ||
Standards/Approvals No | ||
Length 5.99mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- TW
TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
Related links
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-70-6L
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 250 V Enhancement, 8-Pin SO-8