Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.4 A, 250 V Enhancement, 8-Pin SO-8 Si7190ADP-T1-RE3

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Subtotal (1 pack of 5 units)*

TWD224.00

(exc. GST)

TWD235.20

(inc. GST)

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Units
Per unit
Per Pack*
5 - 745TWD44.80TWD224.00
750 - 1495TWD43.60TWD218.00
1500 +TWD43.00TWD215.00

*price indicative

Packaging Options:
RS Stock No.:
178-3875
Mfr. Part No.:
Si7190ADP-T1-RE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14.4A

Maximum Drain Source Voltage Vds

250V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14.9nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.99mm

Height

1.07mm

Standards/Approvals

No

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

Low thermal resistance PowerPAK® package

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