Vishay Siliconix TrenchFET Type N-Channel MOSFET, 150 A, 40 V Enhancement, 8-Pin TO-263
- RS Stock No.:
- 178-3725
- Mfr. Part No.:
- SQM40022EM_GE3
- Manufacturer:
- Vishay Siliconix
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 800 units)*
TWD36,800.00
(exc. GST)
TWD38,640.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Supply shortage
- Plus 800 left, shipping from January 26, 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 3200 | TWD46.00 | TWD36,800.00 |
| 4000 + | TWD45.00 | TWD36,000.00 |
*price indicative
- RS Stock No.:
- 178-3725
- Mfr. Part No.:
- SQM40022EM_GE3
- Manufacturer:
- Vishay Siliconix
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 11.3mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 11.3mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- TW
TrenchFET® power MOSFET
Package with low thermal resistance
Related links
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