Microchip TN2106 N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92

RS Stock No.:: 177-9850P
Mfr. Part No.:: TN2106N3-G
Manufacturer:: Microchip

Microchip TN2106 N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92

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Subtotal 260 units (supplied in a bag)*

TWD5,590.00

(exc. GST)

TWD5,870.80

(inc. GST)

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Units	Per unit
260 - 480	TWD21.50
500 +	TWD21.20

*price indicative

RS Stock No.:: 177-9850P
Mfr. Part No.:: TN2106N3-G
Manufacturer:: Microchip

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Microchip
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-92
	Series	TN2106
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	740mW
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	5.33mm
	Length	5.08mm
	Width	4.06mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-92
	Series TN2106
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 740mW
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 5.33mm
	Length 5.08mm
	Width 4.06mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: TW

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip TN2106 N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92

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