Microchip TN2106 N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 TN2106K1-G
- RS Stock No.:
- 177-9842
- Mfr. Part No.:
- TN2106K1-G
- Manufacturer:
- Microchip
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 20 units)*
TWD418.00
(exc. GST)
TWD438.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,100 unit(s) shipping from October 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 + | TWD20.90 | TWD418.00 |
*price indicative
- RS Stock No.:
- 177-9842
- Mfr. Part No.:
- TN2106K1-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TN2106 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TN2106 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard No | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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