Microchip 2N6661 Type N-Channel MOSFET, 350 mA, 90 V Enhancement, 3-Pin TO-39 2N6661

RS Stock No.:: 177-9750
Mfr. Part No.:: 2N6661
Manufacturer:: Microchip

Microchip 2N6661 Type N-Channel MOSFET, 350 mA, 90 V Enhancement, 3-Pin TO-39 2N6661

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TWD569.00

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RS Stock No.:: 177-9750
Mfr. Part No.:: 2N6661
Manufacturer:: Microchip

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	90V
	Package Type	TO-39
	Series	2N6661
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	6.25W
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	9.398mm
	Height	6.6mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 90V
	Package Type TO-39
	Series 2N6661
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 6.25W
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 9.398mm
	Height 6.6mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 90V and a maximum gate-source voltage of 20V. It has drain-source resistance of 4ohms at a gate-source voltage of 10V. It has continuous drain current of 350mA and maximum power dissipation of 6.25W. The minimum and a maximum driving voltage for this MOSFET is 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007